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| PD -93945A IRF7314Q HEXFET(R) Power MOSFET Typical Applications * Anti-lock Braking Systems (ABS) * Electronic Fuel Injection * Air bag Benefits * Advanced Process Technology * Dual P-Channel MOSFET * Ultra Low On-Resistance * 175C Operating Temperature * Repetitive Avalanche Allowed up to Tjmax * Automotive [Q101] Qualified Description Specifically designed for Automotive applications, these HEXFET (R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The 175C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. VDSS -20V RDS(on) max 0.058@VGS = -4.5V 0.098@VGS = -2.7V ID -5.2A -4.42A S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS EAS IAR EAR TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain CurrentQ Maximum Power DissipationS Maximum Power DissipationS Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Avalanche CurrentQ Repetitive Avalanche Energy Junction and Storage Temperature Range Max. -20 -5.2 -4.3 -43 2.4 1.7 16 12 610 -5.2 See Fig.14, 15, 16 -55 to + 175 Units V A W W mW/C V mJ A mJ C Thermal Resistance Parameter RJA Max. Units 62.5 C/W Maximum Junction-to-Ambient S www.irf.com 1 03/20/02 IRF7314Q Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.7 6.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.009 0.049 0.082 --- --- --- --- --- --- 19 2.1 9.3 18 26 41 38 913 512 260 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.058 VGS = -4.5V, ID = -5.2A R 0.098 VGS = -2.7V, ID = -4.42A R --- V VDS = VGS, ID = -250A --- S VDS = 10V, ID = -5.2A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 150C -100 VGS = -12V nA 100 VGS = 12V 29 ID = -5.2A 3.2 nC VDS = -16V 14 VGS = -4.5V --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -4.5V R --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 44 54 -3.0 A -43 -1.0 66 81 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -3.0A, VGS = 0V R TJ = 25C, I F = -3.0A di/dt = -100A/s R D S Notes: Q Repetitive rating; pulse width limited by max. junction temperature. R Starting TJ = 25C, L = 45mH RG = 25, IAS = -5.2A. S Surface mounted on FR-4 board, t 10sec. T Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7314Q 100 VGS -7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP 100 -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 VGS -7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP 1 -1.5V 1 -1.5V 0.1 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 175C 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 -I D, Drain-to-Source Current (A) TJ = 25 C TJ = 175 C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -5.2A 1.5 10 1.0 1 0.5 0.1 1.0 V DS = -15V 20s PULSE WIDTH 4.0 2.0 3.0 5.0 0.0 -60 -40 -20 0 VGS = -4.5V 20 40 60 80 100 120 140 160 180 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7314Q 2000 1600 -VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = -5.2A 8 VDS =-16V C, Capacitance (pF) 1200 Ciss C oss C rss 6 800 4 400 2 0 1 10 100 0 0 8 16 24 32 40 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) TJ = 175 C OPERATION IN THIS AREA LIMITED BY R DS(on) 10 TJ = 25 C -ID , Drain Current (A) I 100 100us 1ms 10ms 1 10 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 1 0.1 TC = 25 C TJ = 175 C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7314Q 6.0 VDS 5.0 RD VGS RG D.U.T. + -I D , Drain Current (A) 4.0 VGS 3.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 1.0 VGS 0.0 25 50 75 100 125 150 175 10% TC , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 0.01 0.1 PDM t1 t2 100 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7314Q RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance ) 0.080 0.430 0.070 0.330 0.060 VGS = -2.7V 0.230 0.050 ID = -5.2A 0.040 0.130 VGS = -4.5V 0.030 2.0 4.0 6.0 8.0 0.030 0 10 20 30 40 50 -ID , Drain Current ( A ) -VGS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage QG Fig 12. Typical On-Resistance Vs. Drain Current 10 V QGS VG QGD 1600 1200 TOP ID -2.1A -4.4A -5.2A BOTTOM Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. E AS , Single Pulse Avalanche Energy (mJ) 800 50K 12V .2F .3F 400 D.U.T. VGS 3mA + V - DS 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature IG ID ( C) Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7314Q 100 Duty Cycle = Single Pulse - Avalanche Current (A) 10 0.01 1 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.05 0.10 0.1 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 700 600 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = -5.2A 500 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF7314Q SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET E RS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C K x 45 0.10 [.004] y 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] FOOT PRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] Part Marking 8 www.irf.com IRF7314Q Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/02 www.irf.com 9 |
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